X-ray Photoelectron Spectroscopy of Aluminum Gallium Nitride

Investigation on Surface Polarization of Al2O3-capped GaN/AlGaN/GaN Heterostructure by Angle-Resolved X-ray Photoelectron Spectroscopy

The surface polarization of Ga-face gallium nitride (GaN) (2 nm)/AlGaN (22 nm)/GaN channel (150 nm)/buffer/Si with Al2O3 capping layer is investigated by angle-resolved X-ray photoelectron spectroscopy (ARXPS). It is found that the energy band varies from upward bending to downward bending in the interface region, which is believed to be corresponding to the polarization variation. An interfaci...

Surface Chemical States of Heteroepitaxial Nitride Films on Sapphire by Metalorganic Chemical Vapor Deposition

Surface chemical states of GaN, AlGaN and InGaN by metalorganic chemical vapor deposition, and the influence of different dopants are studied with X-ray Photoelectron Spectroscopy (XPS). The results show that for most of the samples the N 1s peak can be fitted with a dominant GaN peak and a small N–H peak, while Ga 3d can be deconvoluted into three peaks from elemental Ga, GaN and Ga2O3. Si-dop...

Al capping layers for nondestructive x-ray photoelectron spectroscopy analyses of transition-metal nitride thin films

Functionalization of nitrogen-doped carbon nanotubes with gallium to form Ga-CN(x)-multi-wall carbon nanotube hybrid materials.

In an effort to combine group III-V semiconductors with carbon nanotubes, a simple solution-based technique for gallium functionalization of nitrogen-doped multi-wall carbon nanotubes has been developed. With an aqueous solution of a gallium salt (GaI(3)), it was possible to form covalent bonds between the Ga(3+) ion and the nitrogen atoms of the doped carbon nanotubes to form a gallium nitride...

Preparation of gallium nitride surfaces for atomic layer deposition of aluminum oxide.

A combined wet and dry cleaning process for GaN(0001) has been investigated with XPS and DFT-MD modeling to determine the molecular-level mechanisms for cleaning and the subsequent nucleation of gate oxide atomic layer deposition (ALD). In situ XPS studies show that for the wet sulfur treatment on GaN(0001), sulfur desorbs at room temperature in vacuum prior to gate oxide deposition. Angle reso...